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| ODU IGBT MODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 80 16 E2 EAT RES FEATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). 3-M5 2-5.6 16 16 G2 4-Fast-on Terminal #110 C1 E2 C2E1 E1 G1 23 23 39.5 0.8 7 12 30 C2E1 G2 E2 E2 C1 E1 G1 Weight: 265 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W C C VRMS N.m (kgf.cm) MBM200GS12AW 1,200 20 200 400 200 (1) 400 1,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) (2) 1.96(20) (3) DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 1.67N.m(17kgf.cm) CHARACTERISTICS Item (Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 19,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.35 VCC=600V ms Turn On Time ton 0.35 0.55 RL=3.0W Switching Times Fall Time tf 0.25 0.35 RG=6.2W (4) 0.55 1.0 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF=200A,VGE=0V Reverse Recovery Time trr 0.35 IF=200A,VGE=-10V, di/dt=300A/ms ms Junction to case Rth(j-c) C/W 0.125 Thermal Impedance IGBT 0.25 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. 6 PDE-M200GS12AW-0 35 17 25 35 46 400 14V VGE=15V 13V12V Tc=25C TYPICAL 400 14V VGE=15V 13V12V Tc=125C TYPICAL Collector Current, Ic (A) 300 11V Collector Current, Ic (A) 300 11V 200 Pc=1000W 200 10V 10V 100 100 9V 9V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL Tc=25C Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 10 10 Tc=125C TYPICAL Collector to Emitter Voltage, VCE (V) 8 Collector to Emitter Voltage, VCE (V) 8 6 6 4 Ic=400A Ic=200A 4 Ic=400A Ic=200A 2 2 0 0 5 10 15 20 0 0 5 10 15 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL 20 Vcc=600V Ic =200A Tc=25C 400 VGE=0 Tc=25C Tc=125C TYPICAL Gate to Emitter Voltage, VGE (V) 10 Forward Current, IF (A) 15 300 200 5 100 0 0 500 1000 1500 0 0 1 2 3 4 5 Gate Charge, QG (nc) Gate charge characteristics Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-M200GS12AW-0 TYPICAL 1.5 Vcc=600V VGE=15V RG=6.2W TC=25C Resistive Load 10 VCC=600V VGE=15V IC=200A TC=25C Resistive Load TYPICAL Switching Time, t (ms) Switching Time, t (ms) 1 1 toff ton tr 0.5 toff ton tf tr tf 0 0 50 100 150 200 250 0.1 1 10 100 Collector Current, IC (A) Switching time vs. Collector current TYPICAL Vcc=600V VGE=15V RG=6.2W TC=125C Inductive Load Gate Resistance, RG (W) Switching time vs. Gate resistance 40 100 TYPICAL VCC=600V VGE=15V IC =200A TC=125C Inductive Load Switching Loss, Eton,Etoff, Err (mJ/pulse) Etoff Switching Loss, Eton, Etoff (mJ/pulse) Etoff Eton 30 Eton 20 10 10 Err 0 0 50 100 150 200 250 1 1 10 100 Collector Current, IC (A) Switching loss vs. Collector current Gate Resistance, RG (W) Switching loss vs. Gate resistance Transient Thermal Impedance, Rth(j-c) (C/W) 1000 1 Collector Current, Ic (A) Diode IGBT 0.1 100 VGE=15V RG=6.2W TC125C 10 0.01 1 0.1 0 200 400 600 800 1000 1200 1400 0.001 0.001 0.01 0.1 1 10 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area Time, t (s) Transient thermal impedance PDE-M200GS12AW-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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